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Número de pieza | AO8818 | |
Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AO8818
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8818 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8818 is Pb-free
(meets ROHS & Sony 259 specifications). AO8818L is
a Green Product ordering option. AO8818 and
AO8818L are electrically identical.
Features
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 2.5V)
ESD Rating: 1500V HBM
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
7
5.5
30
1.5
0.96
-55 to 150
D2
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO8818.PDF ] |
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