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PDF AO8816 Data sheet ( Hoja de datos )
| Número de pieza | AO8816 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8816
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8816 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO8816 is Pb-free
(meets ROHS & Sony 259 specifications). AO8816L
is a Green Product ordering option. AO8816 and
AO8816L are electrically identical.
VDS (V) = 30V
ID = 8 A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 17mΩ (VGS = 4.5)
RDS(ON) < 23mΩ (VGS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8
6
30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8816.PDF ] | |
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