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PDF AO8814 Data sheet ( Hoja de datos )
| Número de pieza | AO8814 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AO8814is Pb-
free (meets ROHS & Sony 259 specifications).
AO8814L is a Green Product ordering option.
AO8814 and AO8814L are electrically identical.
Features
VDS (V) = 20V
ID = 7.5 A (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2500V HBM
D1
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
G1
S1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
7.5
6
30
1.5
0.96
-55 to 150
D2
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8814.PDF ] | |
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