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PDF AO8810 Data sheet ( Hoja de datos )

Número de pieza AO8810
Descripción Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8810 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO8810L is offered in a lead-free package. Standard
Product AO8810 is Pb-free (meets ROHS & Sony 259
specifications). AO8810L is a Green Product ordering
option. AO8810 and AO8810L are electrically identical.
Features
VDS (V) = 20V
ID = 7 A (VGS = 4.5V)
RDS(ON) < 20m(VGS = 4.5V)
RDS(ON) < 24m(VGS = 2.5V)
RDS(ON) < 32m(VGS = 1.8V)
ESD Rating: 2000V HBM
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
7
5.7
30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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