Datasheet SI8405DB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI8405DB	12-V P-Channel 1.8-V (G-S) MOSFET Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = - 4.5 V - 12 0.070 @ VGS = - 2.5 V 0.090 @ VGS = - 1.8 V FEATURES ID (A) - 4.9 - 4.4 - 4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (	Vishay Siliconix

SI840 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI8406DB	N-Channel 20 V (D-S) MOSFET Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.033 at VGS = 4.5 V 20 0.037 at VGS = 2.5 V 0.042 at VGS = 1.8 V ID (A) 16e 16e 15 7.5 nC Qg (Typ.) • • • • TrenchFET® Power MOSFET Ultra-small 1.5 mm x 1 mm Max	Vishay
SI8401DB-T1	P-Channel 20-V (D-S) MOSFET Si8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −4.9 −4.1 rDS(on) (W) 0.065 @ VGS = −4.5 V 0.095 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm)	Vishay Siliconix
SI8401DB	P-Channel 20-V (D-S) MOSFET Si8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −4.9 −4.1 rDS(on) (W) 0.065 @ VGS = −4.5 V 0.095 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm)	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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