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PDF Si8406DB Data sheet ( Hoja de datos )
| Número de pieza | Si8406DB | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20 V (D-S) MOSFET
Si8406DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.033 at VGS = 4.5 V
20 0.037 at VGS = 2.5 V
0.042 at VGS = 1.8 V
ID (A)
16e
16e
15
Qg (Typ.)
7.5 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SS
36
DD
45
Device Marking: 8406
xxx = Date/Lot Traceability Code
Ordering Information:
Si8406DB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Ultra-small 1.5 mm x 1 mm Maximum Outline
• Ultra-thin 0.59 mm Maximum Height
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• Battery Management
• Boost Converter
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Package Reflow Conditionsc
IR/Convection
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. TC = 25 °C package limited.
Limit
20
±8
16e
13.5
7.8a, b
6.2a, b
30
11
2.3a, b
13
8.4
2.77a, b
1.77a, b
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 62530
For technical questions, contact: [email protected]
www.vishay.com
S12-0978-Rev. A, 30-Apr-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.08
10 TJ = 150 °C
TJ = 25 °C
1
0.06
0.04
0.02
Si8406DB
Vishay Siliconix
ID = 1 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.8
0.7
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
0.6 20
0.5
ID = 250 μA
0.4
15
10
0.3 5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001 0.01 0.1
1 10
Pulse (s)
100 1000
Single Pulse Power, Junction-to-Ambient
10
100 μs
1 1 ms
10 ms
0.1
TA = 25 °C
100 ms,1 s
10 s
DC
BVDSS Limited
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62530
For technical questions, contact: [email protected]
www.vishay.com
S12-0978-Rev. A, 30-Apr-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8406DB.PDF ] | |
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