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PDF SI8405DB Data sheet ( Hoja de datos )

Número de pieza SI8405DB
Descripción 12-V P-Channel 1.8-V (G-S) MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! SI8405DB Hoja de datos, Descripción, Manual

Si8405DB
Vishay Siliconix
12-V P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.055 @ VGS = - 4.5 V
- 12 0.070 @ VGS = - 2.5 V
0.090 @ VGS = - 1.8 V
ID (A)
- 4.9
- 4.4
- 4.0
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
D PA, Battery and Load Switch
D Battery Charger Switch
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8405
xxx
S
4
G
1
S
Device Marking: 8405
xxx = Date/Lot Traceability Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Package Reflow Conditionsb
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VPR
IR/Convection
ID
IDM
IS
PD
TJ, Tstg
- 4.9 - 3.6
- 3.9 - 2.8
- 10
- 2.5 - 1.3
2.77
1.47
1.77
0.94
- 55 to 150
215
220
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 71814
S-20804—Rev. C, 01-Jul-02
Symbol
RthJA
RthJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
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SI8405DB pdf
PACKAGE OUTLINE
MICRO FOOT: 4−BUMP (2 X 2, 0.8−mm PITCH)
4 O 0.30 X 0.31
Note 3
Solder Mask O X 0.40
e
A2
A
A1
e
Recommended Land
b Diamerter
8405
XXX
E
Mark on Backside of Die
NOTES (Unless Otherwise Specified):
5. Laser mark on the silicon die back, coated with a thin metal.
6. Bumps are Eutectic solder 63/57 Sn/Pb.
7. Non-solder mask defined copper landing pad.
8. The flat side of wafers is oriented at the bottom.
Si8405DB
Vishay Siliconix
Silicon
Bump Note 2
S
e
eS
D
Document Number: 71814
S-20804—Rev. C, 01-Jul-02
Dim
A
A1
A2
b
D
E
e
S
MILLIMETERS*
Min Max
0.600
0.650
0.260
0.290
0.340
0.360
0.370
0.410
1.520
1.600
1.520
1.600
0.750
0.850
0.370
0.380
INCHES
Min Max
0.0236
0.0256
0.0102
0.0114
0.0134
0.0142
0.0146
0.0161
0.0598
0.0630
0.0598
0.0630
0.0295
0.0335
0.0146
0.0150
* Use millimeters as the primary measurement.
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