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Datasheet SI3460 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | SI3460 | IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER www.DataSheet.co.kr
Si3460
IEEE 802.3af PSE INTERFACE
Features
IEEE 802.3af™ compliant PSE and dc-dc controller Autonomous operation requires no host processor interface Complete reference design available, including Si3460 controller, PSE firmware, and schematic: Low-cost BOM with compact PCB fo |
 Silicon Laboratories |
 |
| 4 | SI3460BDV | N-Channel 20-V (D-S) MOSFET www.DataSheet.co.kr
Si3460BDV
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω) 0.027 at VGS = 4.5 V 20 0.032 at VGS = 2.5 V 0.040 at VGS = 1.8 V ID (A)a 8 8 8 9 nC Qg (Typ)
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Porta |
 Vishay Siliconix |
|
| 3 | SI3460DDV | N-Channel 20 V (D-S) MOSFET www.DataSheet.co.kr
Si3460DDV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® P |
Vishay Siliconix |
|
| 2 | SI3460DV | N-Channel 20-V (D-S) MOSFET Si3460DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
6.8 6.3 5.7
rDS(on) (W)
0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V
D TrenchFETr Power MOSFET D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S |
Vishay Siliconix |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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