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PDF SI3460BDV Data sheet ( Hoja de datos )
| Número de pieza | SI3460BDV | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
N-Channel 20-V (D-S) MOSFET
Si3460BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.027 at VGS = 4.5 V
20 0.032 at VGS = 2.5 V
0.040 at VGS = 1.8 V
ID (A)a
8
8
8
Qg (Typ)
9 nC
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Applications
• Load Switch for Low Voltage Bus
RoHS
COMPLIANT
D
3 mm D
G
TSOP-6
Top View
16
25
34
D
D
S
2.85 mm
Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free)
Marking Code
AF XXX
Lot Traceability
and Date Code
Part # Code
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
±8
8a
7.1
6.7b, c
5.4b, c
20
2.9
1.7b, c
3.5
2.2
2b, c
1.3b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
50
30
Maximum
62.5
36
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74412
S-70187-Rev. A, 29-Jan-07
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
4
Si3460BDV
Vishay Siliconix
8
Package Limited
6
4
2
3
2
1
0
0 25 50 75 100 125 150
Foot (Drain) Temperature ( C)
Current Derating*
0
25 50 75 100 125 150
Foot (Drain) Temperature ( C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74412
S-70187-Rev. A, 29-Jan-07
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI3460BDV.PDF ] | |
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