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PDF SI3460DDV Data sheet ( Hoja de datos )
| Número de pieza | SI3460DDV | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 20 V (D-S) MOSFET
Si3460DDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.028 at VGS = 4.5 V
0.032 at VGS = 2.5 V
0.038 at VGS = 1.8 V
ID (A)d
7.9
7.4
6.8
Qg (Typ.)
6.7 nC
TSOP-6
Top View
D1
6D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switch
D
(1, 2, 5, 6)
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
BA XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Avalanche Current
TC = 25 °C
TA = 25 °C
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
G
(3)
(4)
S
N-Channel MOSFET
Limit
20
±8
7.9
6.3
6.2a, b
5.0a, b
20
2.2
1.4a, b
8
3.2
2.7
1.7
1.7a, b
1.1a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on TC = 25 °C.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Symbol
RthJA
RthJF
Typical
61
38
Maximum
74
46
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
Si3460DDV
Vishay Siliconix
8
Package Limited
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3.5 1.5
2.8 1.2
2.1 0.9
1.4 0.6
0.7 0.3
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
www.vishay.com
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5 Page | ||
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