Datasheet SI3460DDV Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI3460DDV	N-Channel 20 V (D-S) MOSFET www.DataSheet.co.kr Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® P	Vishay Siliconix

SI3460 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI3460DV-T1	N-Channel 20-V (D-S) MOSFET Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6)	Vishay Siliconix
SI3460DV	N-Channel 20-V (D-S) MOSFET Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6)	Vishay Siliconix
SI3460DDV	N-Channel 20 V (D-S) MOSFET Datasheet.es Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definiti	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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