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Datasheet PTFA220081M Equivalent ( PDF ) |
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1 | PTFA220081M | High Power RF LDMOS Field Effect Transistor PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers exc |
Infineon |
PTFA2200 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFA220081M | High Power RF LDMOS Field Effect Transistor |
Infineon |
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PTFA220041M | High Power RF LDMOS Field Effect Transistor |
Infineon |
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