PDF PTFA220081M Data sheet ( Hoja de datos )

Número de pieza	PTFA220081M
Descripción	High Power RF LDMOS Field Effect Transistor
Fabricantes	Infineon
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No Preview Available ! PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220081M Package PG-SON-10 Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz -10 -20 Efficiency 50 40 -30 30 IMD 3rd -40 20 -50 IMD 5th 10 -60 34 35 36 37 38 39 40 Output Power, PEP (dBm) 0 41 Features • Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB • Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power • Integrated ESD protection : Human Body Model, Class 2 (minimum) • Excellent thermal stability • Pb-free and RoHS compliant RF Characteristics Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps hD IMD Min — — — Typ 17 38 –31 Max — — — Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 17 Rev. 04, 2010-06-09 1 page Confidential, Limited Internal Distribution Reference Circuit, 920 – 960 MHz PTFA220081M RF_IN L1 22 nH TL104 TL105 3 1 4 S2 2 TL108 TL106 TL109 TL113 C105 68 pF TL102 TL101 21 3 C106 5.6 pF TL114 TL111 TL112 21 3 21 3 C104 16 pF C107 16 pF TL103 R107 10 Ohm R105 1.3 Ohm TL110 2 a080304m_960 MHz_bdin_06-03-2010 3 4 1 TL107 GATE_DUT R103 2000 Ohm R104 10 Ohm S3 3 R106 510 Ohm PORT 3 C103 1000 pF S5 8 In NC 4 2 1 Out NC 3 6 75 C102 1000 pF C101 1000 pF R102 1200 Ohm R101 1300 Ohm S4 2C 14 B 3E VDD Reference circuit input schematic for ƒ = 920 – 960 MHz TL205 TL204 TL206 2 TL225 3 1 TL217 VDD TL218 TL224 21 3 C205 4710000 pF TL213 C204 10000000 pF TL216 TL223 2 3 1 C202 68 pF TL202 2 3 1 TL201 21 3 TL207 R201 0 Ohm TL208 TL214 TL203 TL215 3 a080304m_960 MHz_bdout_06-03-2010 21 DRAIN_DUT TL212 TL211 TL209 3 21 TL210 TL222 TL221 12 3 C201 3.6 pF TL219 C203 68 pF TL220 RF_OUT Reference circuit output schematic for ƒ = 920 – 960 MHz Data Sheet 5 of 17 Rev. 04, 2010-06-09 5 Page Confidential, Limited Internal Distribution Typical Performance, 2140 MHz (cont.) Two-tone Gain vs. Output Power VDD = 28 V, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz 18.0 17.5 IDQ = 120 mA IDQ = 100 mA 17.0 16.5 IDQ = 80 mA 16.0 33 34 35 36 37 38 39 40 41 Output Power (dBm) PTFA220081M Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 100 mA 17.5 Gain 17.0 65 55 16.5 45 16.0 Efficiency 35 15.5 15.0 2110 MHz 2140 MHz 2170 MHz 25 15 31 32 33 34 35 36 37 38 39 40 41 Output Power (dBm) Intermodulation Distortion vs. Tone Spacing VDD = 28 V, IDQ = 100 mA, ƒ = 2140 MHz, PEP = 8 W -25 -30 3rd Order -35 -40 -45 5th -50 7th -55 0 10 20 30 40 50 60 70 80 Tone Spacing (MHz) Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 100 mA, ƒ1 = 2139.5 MHz, ƒ2 = 2140.5 MHz -20 3rd Order -30 5th -40 -50 -60 35 7th 36 37 38 39 40 Output Power, PEP (dBm) 41 Data Sheet 11 of 17 Rev. 04, 2010-06-09 11 Page

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