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PDF PTFA220041M Data sheet ( Hoja de datos )
| Número de pieza | PTFA220041M | |
| Descripción | High Power RF LDMOS Field Effect Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
4 W, 28 V, 700 – 2200 MHz
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET
intended for power amplifier applications in the 700 MHz to 2200 MHz
operating range. This LDMOS device offers excellent gain, efficiency
and linearity performance in a small, overmolded plastic package.
PTFA220041M
Package PG-SON-10
Two-tone Drive-up
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
21 60
20
Gain
19
50
40
18
17
33
Efficiency
34 35 36 37 38
Output Power, PEP (dBm)
30
20
39
Features
• Typical two-carrier WCDMA performance,
1842 MHz, 8 dB PAR
- POUT = 27 dBm Avg
- ACPR = –44 dBc
• Typical CW performance, 1842 MHz, 28 V
- POUT = 37 dBm
- Efficiency = 53.5%
- Gain = 17.9 dB
• Typical CW performance, 940 MHz, 28 V
- POUT = 37.5 dBm
- Efficiency = 57%
- Gain = 19.7 dB
• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 50 mA, POUT = 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps 18.5 19 — dB
ηD
35 37.5
—
%
IMD — –29 –28 dBc
Input Return Loss
IRL — –8 –7 dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 18
Rev. 10.1, 2016-06-01
1 page  
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz
22
Gain
20
60
50
18 40
16 +85°C
+ 25° C
Efficiency –30°C
30
14 20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
-10
-20
-30
-40
-50
-60
32
Intermodulation Distortion
vs. Output Power
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
3rd Order
5th
7th
34 36 38
Output Power, PEP (dBm)
40
PTFA220041M
Intermodulation Distortion
vs. Tone Spacing
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz,
POUT (PEP) = 4 W
-10
-20 3rd Order
-30
5th
-40
-50 7th
-60
0
20 40 60 80
Tone Spacing (MHz)
100
Data Sheet – DRAFT ONLY
5 of 18
Rev. 10.1, 2016-06-01
5 Page 
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz, 3GPP
WCDMA, P/AR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
22 50
Gain
21
40
20
Efficiency
19
30
20
18 10
17
25
27 29 31 33
Output Power (dBm)
0
35
Two-tone Drive-up
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz
-5
-10
-15
-20
-25
-30
-35
-40
33
Efficiency
IMD3
34 35 36 37 38
Output Power, PEP (dBm)
55
50
45
40
35
30
25
20
39
PTFA220041M
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz
22 70
21 Gain
60
20 50
19
Efficiency
18
40
30
17 20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz
22
Gain
21
60
50
20 40
19 Efficiency
30
18
33
34 35 36 37 38
Output Power, PEP (dBm)
20
39
Data Sheet – DRAFT ONLY
11 of 18
Rev. 10.1, 2016-06-01
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet PTFA220041M.PDF ] | |
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