Datasheet BCV28 Equivalent ( PDF ) - Transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV28; BCV48 PNP Darlington transistors Product speci cation Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product speci cation PNP Darlington transistors FEATURES Very high DC current gain (min. 10000) High current (max. 500 mA) Low voltage (max. 60 V). APPLICATIONS Where very high amplification is required. ha

SOT89 PNP SILICON DARLINGTON TRANSISTOR ISSUE 3 SEPTEMBER 1995 COMPLEMENTARY TYPE PARTMARKING DETAIL BCV29 ED 7 BCV28 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P

PNP Silicon Darlington Transistors BCV 28 BCV 48 For general AF applications q High collector current q High current gain q Complementary types: BCV 29, BCV 49 (NPN) q Type BCV 28 BCV 48 Marking ED EE Ordering Code (tape and reel) Q62702-C1852 Q62702-C1854 Pin Configuration 1 2 3 4 B C E C Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-b

PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV29, BCV49 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCV28, BCV48 1 2 3 2 Type BCV28 BCV48 Marking ED EE Maximum Ratings Parameter Collector-emitter voltage BCV28 BCV48 Collector-base voltage BCV28 BCV48 Emitter-base voltage Collector