Datasheet BCV26 Equivalent ( PDF ) - Transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product speci cation Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product speci cation PNP Darlington transistors FEATURES High current (max. 500 mA) Low voltage (max. 60 V) Very high DC current gain (min. 10000). APPLICATIONS Where very high amplification is required. DE

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat) VBE(sat) -100 -1.0 -1.5 4K 10K 20K 4K 200 Typical 4.5 Typical -100 -10 -100 -1.0 -1.5 2K 4K 10K 2K 200 Ty

PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-bas

BCV26 Discrete POWER & Signal Technologies BCV26 C E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25

BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 3 2 1 VPS05161 Type BCV26 BCV46 Maximum Ratings Parameter Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BCV26 30 40 10 BCV46 60 80 10 Unit V Collector-emitter voltage Collect