Datasheet BCV27 Equivalent ( PDF ) - Transistor

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product speci cation Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product speci cation NPN Darlington transistors FEATURES Medium current (max. 500 mA) Low voltage (max. 60 V) High DC current gain (min. 20000). APPLICATIONS Preamplifier input applications. DESCRIPTION NPN D

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 7 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES BCV27 BCV28 BCV47 BCV48 PARTMARKING DETAILS BCV27 ZFF BCV47 ZFG SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV47 MIN. MAX. 80 60 10 100 10 IEBO VCE(sat) VBE(sat) hFE 100 1.0 1.5 4K 10K 20K 4K 170 Typical 3.5 Typical 100 10 100 1.0 1.5 2K 4K 10K 2K 170

NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base

BCV27 Discrete POWER & Signal Technologies BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BCV27, BCV47 32 1 Type BCV27 BCV47 Marking FFs FGs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C Package SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage BCV27 BCV47 Sy