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| BCV28 Description |
| PNP Darlington transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCV28; BCV48 PNP Darlington transistors
Product speci cation Supersedes data of 1997 Apr 21 1999 Apr 08
Philips Semiconductors
Product speci cation
PNP Darlington transistors
FEATURES Very high DC current gain (min. 10000) High current (max. 500 mA) Low voltage (max. 60 V). APPLICATIONS Where very high amplification is required.
handbook, halfpage
BCV28; BCV48
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
DESCRIPTION PNP
NXP Semiconductors |
| PNP SILICON DARLINGTON TRANSISTOR
SOT89 PNP SILICON DARLINGTON TRANSISTOR
ISSUE 3 SEPTEMBER 1995 COMPLEMENTARY TYPE PARTMARKING DETAIL BCV29 ED 7
BCV28
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -40 -30 -10 -800 -500 1 -65 to +150 UNIT V V V mA mA W °C
ELECTRICAL CHARACTER
Zetex Semiconductors |
| Related Part Number |
BCV71 | BCV26 BCV61A | BCV63B BCV47 | BCV62A |
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