Datasheet 2SD601LT1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SD601LT1	NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 .,LCharacteristi	WEJ

2SD601 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SD601A	Silicon NPN epitaxial planer type Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE	Panasonic Semiconductor
2SD601A	NPN Plastic Encapsulated Transistor Elektronische Bauelemente 2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) CLASSIFICATION OF hFE	SeCoS
2SD601LT1	NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=	WEJ

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Número de pieza	Descripción	Fabricantes	PDF
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