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PDF 2SD601A Data sheet ( Hoja de datos )
| Número de pieza | 2SD601A | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB709A
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
0.1 µA
100 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE1*
hFE2
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
50 V
7V
160 460
90
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
0.1 0.3
V
Transition frequency
fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
110 mV
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
160 ~ 260
ZQ
R
210 ~ 340
ZR
S
290 ~ 460
ZS
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD601A.PDF ] | |
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