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PDF 2SD601LT1 Data sheet ( Hoja de datos )
| Número de pieza | 2SD601LT1 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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2SD601LT1
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
* Complement to S9015LT1
* Collector Current: Ic= 100mA
D* Collector-Emitter Voltage:Vce= 45V
* High Total Power Dissipation:Pc=225mW
T* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25
.,LCharacteristic
Symbol Rating
Collector-Base Voltage
Vcbo
50
Collector-Emitter Voltage
Vceo
45
OEmitter-Base Voltage
Vebo
5
Collector Current
Ic 100
CCollector Dissipation Ta=25 *
PD 225
Junction Temperature
Tj 150
ICStorage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1 . G AT E
2 .SO U RC E R
3.DRAIE
U nit :m m
ELECTRICAL CHARACTERISTICS at Ta=25
NCharacteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 50
OCollector-Emitter
Breakdown BVceo 45
Voltage#
REmitter-Base Breakdown Voltage
BVebo 5
Collector-Base Cutoff Current
Icbo
50
TEmitter-Base Cutoff Current
Iebo
50
DC Current Gain
Hfe 135 270 1000
CCollector-Emitter Saturation Voltage Vce(sat)
0.3
EBase-Emitter Saturation Voltage
Vbe(sat)
1.00
Base-Emitter on Voltage
Vbe(on) 0.58 0.63 o.7
LOutput Capacitance
Cob 2.2 3.5
Current Gain-Bandwidth Product
fT 150 270
ENoise Figure
NF 10
J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
EDEVICE MARKING:
W 2SD601LT1=L5
Unit
V
V
V
nA
nA
V
V
V
PF
MHz
dB
Test Conditions
Ic=100uA Ie=0
Ic= 1mA Ib=0
Ie= 100uA Ic=0
Vcb= 50V Ie=0
Veb= 5V Ic= 0
Vce= 5V Ic= 1mA
Ic= 100mA Ib= 5mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD601LT1.PDF ] | |
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