IRFP460LC Datasheet PDF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460LC FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY 500 VGS = 10 V 120 32 49 Single D FEATURES 0.27 VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV, dt Rating Repetitive Avalanche Rated Lead (Pb)-free Av

IRFP460PBF ® IRFP460PBF Pb Free Plating Product Pb 20A,500V Heatsink N-Channel Type Power MOSFET Features - RDS(on) (Max 0.24 Ω )@VGS=10V - Gate Charge (Typical 130nC) - Improved dv, dt Capabi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460 FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source O

• Advanced process technology • Key parameters optimized for PDP Sustain & Energy Recovery applications • Low EPULSE rating to reduce the power

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability