IRFP460 Datasheet PDF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460 FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM

® IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH™ MOSFET TYPE IRFP460 s s s s s V DSS 500 V R DS(on) < 0.27 Ω ID 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ p

Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G Benefits Improved Gate,

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP452 FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source O

• Advanced process technology • Key parameters optimized for PDP Sustain & Energy Recovery applications • Low EPULSE rating to reduce the power

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability