Datasheet IRFP460 Equivalent ( PDF ) - MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460 FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM

$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 500V Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drai

IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators

® IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH™ MOSFET TYPE IRFP460 s s s s s V DSS 500 V R DS(on) < 0.27 Ω ID 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ p