Datasheet IRFP460LC Equivalent ( PDF ) - MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460LC FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET ® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv, dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFET

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY 500 VGS = 10 V 120 32 49 Single D FEATURES 0.27 VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV, dt Rating Repetitive Avalanche Rated Lead (Pb)-free Av

PD - 94902 IRFP460LCPbF Lead-Free www.irf.com 1 12, 19, 03 IRFP460LCPbF 2 www.irf.com IRFP460LCPbF www.irf.com 3 IRFP460LCPbF 4 www.irf.com IRFP460LCPbF www.irf.com 5 IRFP460LCPbF 6 www.irf.com IRFP460LCPbF www.irf.com 7 IRFP460LCPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D