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PDF SMG2306N Data sheet ( Hoja de datos )
| Número de pieza | SMG2306N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2306N
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package
saves board space.
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t ≦ 10 sec
Steady State
RJA
Rating
30
±20
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2306N.PDF ] | |
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