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PDF SMG2306 Data sheet ( Hoja de datos )
| Número de pieza | SMG2306 | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMG2306 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2306 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is universally used for all
commercial-industrial applications
Features
* Capable of 2.5V gate drive
* Lower on-resistance
* Reliable and Rugged
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
A
L
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
G
J
K
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2306
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS@4.5V
3
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
S
Ratings
20
±12
5.3
4.3
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2306.PDF ] | |
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