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PDF SMG2306NE Data sheet ( Hoja de datos )

Número de pieza SMG2306NE
Descripción N-Channel MosFET
Fabricantes SeCoS 
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No Preview Available ! SMG2306NE Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SMG2306NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package
saves board space.
APPLICATION
PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t 10 sec
Steady State
RJA
Ratings
30
±20
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
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