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PDF NX7002BK Data sheet ( Hoja de datos )
| Número de pieza | NX7002BK | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX7002BK
60 V, N-channel Trench MOSFET
12 May 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 270 mA
VGS = 10 V; Tsp = 25 °C
- - 330 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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NXP Semiconductors
NX7002BK
60 V, N-channel Trench MOSFET
103 aaa-014128
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-014129
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BK
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
12. Package outline
Plastic surface-mounted package; 3 leads
D
B
NX7002BK
60 V, N-channel Trench MOSFET
SOT23
E AX
3
1
e1 bp
e
2
wB
HE v A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
Dimensions (mm are the original dimensions)
Unit A A1 bp c D E e e1 HE Lp Q v w
max 1.1 0.1 0.48 0.15 3.0 1.4
2.5 0.45 0.55
mm nom
1.9 0.95
0.2 0.1
min 0.9
0.38 0.09 2.8 1.2
2.1 0.15 0.45
Outline
version
References
IEC
JEDEC
JEITA
SOT23
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
NX7002BK
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 May 2015
European
projection
sot023_po
Issue date
14-06-19
14-09-22
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NX7002BK.PDF ] | |
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