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PDF NX7002BKMB Data sheet ( Hoja de datos )
| Número de pieza | NX7002BKMB | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX7002BKMB
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 350 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
NX7002BKMB
60 V, N-channel Trench MOSFET
103 aaa-015213
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-015215
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102 0.50
0.33
0.25 0.20
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
NX7002BKMB
60 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
L (2x)
2
b (2x)
e
1
e1
L1
3 b1
A
A1
E
D
Dimensions
0 0.5
scale
Unit A(1) A1 b b1 D E e e1 L L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
mm nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
References
IEC
JEDEC
JEITA
SOT883B
1 mm
Fig. 19. Package outline DFN1006B-3 (SOT883B)
NX7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
European
projection
sot883b_po
Issue date
11-11-02
12-01-03
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
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