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PDF NX7002BKM Data sheet ( Hoja de datos )
| Número de pieza | NX7002BKM | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX7002BKM
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 350 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
NX7002BKM
60 V, N-channel Trench MOSFET
103 aaa-015213
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-015215
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102 0.50
0.33
0.25 0.20
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKM
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
NX7002BKM
60 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
2
b
e
1
L
L1
3 b1
e1
A
A1
E
D
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
A1
max.
b
b1
D
E
e e1 L L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT883
SC-101
0
Fig. 18. Package outline DFN1006-3 (SOT883)
NX7002BKM
All information provided in this document is subject to legal disclaimers.
Product data sheet
3 December 2014
0.5
scale
1 mm
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
© NXP Semiconductors N.V. 2014. All rights reserved
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