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PDF TPCP8203 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8203 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8203
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
TPCP8203
Portable Equipment Applications
Motor Drive Applications
DC/DC Converters
• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 8.6 S (typ.)
• Low leakage current: IDSS = 10 μA (max)(VDS = 40 V)
• Enhancement model: Vth = 1.3 to 2.5V
(VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
4.7
18.8
1.48
Unit
V
V
V
A
1.23
W
0.58
0.36
10.6 mJ
4.7 A
0.12 mJ
150
−55 to 150
°C
°C
Note: For Notes 1 to 6, see the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
0.33±0.05
0.05 M A
85
Unit: mm
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1132
1.12+-00..1132
1．Source1 5．Drain2
2．Gate1 6 Drain2
3．Source2 7 Drain1
4．Gate2 8．Drain1
JEDEC
0.28
+0.1
-0.11
⎯
JEITA
⎯
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
87 6 5
12
3
Marking (Note 6)
876
4
5
8203
※
123
4
Lot No.
1 2007-02-28
Downloaded from Elcodis.com electronic components distributor
1 page  
100
Common source
Tc = 25°C
Single Pulse test
80
RDS (ON) – Ta
60 ID = 4.7, 2.4, 1.2A
VGS = 4.5 V
40
ID = 4.7, 2.4, 1.2A
20 VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCP8203
100
Common source
Ta = 25°C
Single Pulse test
IDR – VDS
10 10
53
1 1 VGS = 0, −1 V
0.1
0
− 0.2 − 0.4 − 0.6 − 0.8
− 1 − 1.2
Drain−source voltage VDS (V)
10000
C – VDS
1000
Ciss
100
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
10
0.1
1
Coss
Crss
10
Drain−source voltage VDS (V)
100
Vth – Ta
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.0
1.5 (1)
(2)
1.0
(3)
0.5
(4)
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation
(Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual operation
(Note 3b)
t=5s
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
40
VDS
30
20
Dynamic input/output
characteristics
16
Common source
ID = 4.7 A
Ta = 25°C
14
Pulse test
12
8V
16V 10
VDD = 32V
8
VGS
6
10 4
2
00
0 4 8 12 16 20
Total gate charge Qg (nC)
Downloaded from Elcodis.com electronic components distributor
5
2007-02-28
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8203.PDF ] | |
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