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PDF TPCP8201 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8201 | |
| Descripción | Field Effect Transistor Silicon MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IwIIw) w.DataSheet4U.com
TPCP8201
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
• Lead(Pb)-Free
• Low drain-source ON resistance
: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance
:|Yfs| = 7.0 S (typ.)
• Low leakage current
: IDSS = 10 µA (VDS = 30 V)
• Enhancement mode
: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
4.2
16.8
1.48
1.23
0.58
0.36
2.86
2.1
0.12
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
0.33±0.05
0.05 M A
85
Unit: mm
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1123
1.12+-00..1123
1．Source1
2．Gate1
3．Source2
4．Gate2
5．Drain2
6．Drain2
7．Drain1
8．Drain1
JEDEC
0.28
+0.1
-0.11
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
87 6 5
12
3
Marking (Note 6)
4
876
5
Note: For Notes 1 to 6, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
8201
＊
123
4
Lot No.
1 2004-07-06
1 page  
RDS (ON) – Ta
120
Common source
Pulse test
100
2A
80
VGS = 4.5V
60
ID = 4A
1A
40 VGS = 10V
ID = 4, 2, 1A
20
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCP8201
www.DataSheet4U.com
10
10
5
3
IDR – VDS
5.0 3.0
1.0
VGS = 0 V
1
0.5
0.3 Common source
Ta = 25°C
Pulse test
0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100 Coss
Crss
10
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1 0.3
1
3 5 10
30 50 100
Drain−source voltage VDS (V)
Vth – Ta
3
2
1 Common source
VDS = 10 V
ID = 200μA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
1.6 (1)
(2)
1.2
0.8
(3)
0.4 (4)
PD – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t=5s
0
0 25 50 75 100 125 150 175 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
30 15
25 VDD = 24V
20 VDS
15
12
10
6
5
VDD = 6V
VGS
10
24
12
Common source 5
ID = 4.0A
Ta = 25°C
Pulse test
00
0 4 8 12 16
Total gate charge Qg (nC)
5 2004-07-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8201.PDF ] | |
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