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PDF TPCP8204 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8204 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCP8204
Portable Equipment Applications
Motor Drive Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
（VGS=10V）
• High forward transfer admittance:|Yfs| = 8 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC
Drain current
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
30
30
±20
4.2
16.8
1.48
1.23
0.58
0.36
2.86
2.1
0.009
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 6, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
0.33±0.05
0.05 M A
85
Unit: mm
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
1.12
+0.13
-0.12
1．Source1
2．Gate1
3．Source2
4．Gate2
5．Drain2
6．Drain2
7．Drain1
8．Drain1
JEDEC
0.28
+0.1
-0.11
⎯
JEITA
⎯
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
87 6 5
12 3 4
Marking (Note 6)
876
5
8204
123
4
Lot No.
1 2010-09-08
1 page  
RDS (ON) – Ta
100
Common source
Pulse test
80
ID = 4.2 A
2.1
60 VGS = 4.5 V
1
40
20 VGS = 10 V
ID = 4.2, 2.1, 1 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCP8204
IDR – VDS
10
10
4.5 3
1 VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100
Coss
Crss
10
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1 1
10
Drain−source voltage VDS (V)
100
Vth – Ta
3
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
1.6 (1)
(2)
1.2
0.8
(3)
0.4 (4)
PD – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t=5s
0
0 25 50 75 100 125 150 175 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
30 30
25
VDS
20
Common source
ID = 4.2 A
Ta = 25°C
Pulse test
25
20
15
VDD ≈ 6 V
15
10 12 10
24
5
VGS
5
00
0 2 46 8
Total gate charge Qg (nC)
5 2010-09-08
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8204.PDF ] | |
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