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PDF AO4948 Data sheet ( Hoja de datos )
| Número de pieza | AO4948 | |
| Descripción | 30V Dual N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4948
30V Dual N-Channel MOSFET
SRFET TM
General Description
Product Summary
The AO4948 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
VDS= 30V
ID= 8.8A (VGS=10V)
RDS(ON)
< 16mΩ (VGS=10V)
< 22mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
FET2(N-Channel)
30V
8A (VGS=10V)
RDS(ON)
< 19mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1
Pin1
S1 D1
G1 D1
S2 D2
G2 D2
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Max FET2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.3mH C
ID
IDM
IAS, IAR
EAS, EAR
8.8
7.1
60
21
66
8
6.5
40
13
25
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
D2
S2
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Rev 3: Dec 2010
www.aosmd.com
Page 1 of 8
1 page  
AO4948
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.2
40
1.8
15.5
21
18.6
30
0.75
1
5
10
2.4
19
25
28
1
2.5
V
µA
µA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888
77 110 145
50 82 115
0.5 1.1 1.7
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 15 18
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=8A
6 7.5 9
2 2.5 3
nC
nC
Qgd Gate Drain Charge
235
nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8Ω,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
19 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14 18 22
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Dec 2010
www.aosmd.com
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4948.PDF ] | |
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