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PDF AO4946 Data sheet ( Hoja de datos )
| Número de pieza | AO4946 | |
| Descripción | 30V Dual N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4946
30V Dual N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4946 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate
charge. This device is suitable for use as a low and
high side switch in SMPS and general purpose
applications.
Product Summary
VDS (V) = 30V
ID = 8.6A
(VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
D1/S2
G2
S1
G1
D2
D2
D1/S2
D1/S2 G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
ID
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.6
6.9
40
16
38
2
1.3
-55 to 150
D1
G2
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO4946
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
1.0E-06
0 50 100 150 200
Temperature (°C)
DYNAMIC PAFRigAurMe E12T: EDRioSde Reverse Leakage Current vs.
Junction Temperature
30
di/dt=800A/us
25
125ºC
12
10
20
15
Qrr
10
Irm
5
25ºC
125ºC
25ºC
8
6
4
2
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9
20A
0.8
0.7
0.6
0.5
10A 5A
0.4
0.3
0.2 IS=1A
0.1
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
12
di/dt=800A/us
10
125ºC
3
2.5
8
trr
6
25ºC
2
1.5
4
S
2
125ºC
1
0.5
25ºC
00
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25 10 15
2.5
20
125ºC 8
125ºC
12
Is=20A
2
Is=20A
25ºC
15 6 9
25ºC
1.5
trr
10
125º 4 6 25ºC
1
5 Qrr
25ºC
2
Irm
0
0
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
3 125ºC
0.5
S
00
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4946.PDF ] | |
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