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PDF AO4940 Data sheet ( Hoja de datos )
| Número de pieza | AO4940 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4940
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AO4940 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with the
synchronous MOSFET to boost efficiency further. Standard
www.DaPtaroSdhuecettA4UO.4c9o4m0 is Pb-free (meets ROHS & Sony 259
specifications).
Features
FET1
VDS (V) = 30V
ID = 9.1A
RDS(ON) < 15mΩ
RDS(ON) < 23mΩ
SOIC-8
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
FET2
VDS(V) = 30V
I D=7.5A
(VGS = 10V)
< 23mΩ
(VGS = 10V)
< 36mΩ
(VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max FET1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
Power DissipationA
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
IDSM
IDM
IAR
EAR
PDSM
TJ, TSTG
10 sec Steady-State
30
±20
9.1 7.6
7.3 6.1
100
17
43
2 1.4
1.3 0.9
-55 to 150
Max FET2
10 sec Steady-State
30
±20
7.5 6.2
6.0 5.0
50
13
25
2 1.4
1.3 0.9
-55 to 150
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Symbol
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A Steady-State
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Typ
48
74
32
Max
62.5
90
40
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO4940
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=7.5A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
gFS Forward Transconductance
www.DVatSaDSheet4UD.cioodme Forward Voltage
VDS=5V, ID=7.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=7.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=7.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
Min
30
1.3
50
Typ Max Units
V
1
µA
5
±100 nA
1.6 2.5
V
A
19 23
mΩ
27 34
29 36 mΩ
22 S
0.75 1
V
3A
621 820
118
85
0.8 1.5
pF
pF
pF
Ω
11.3 17
5.7 8.5
2.1
3
4.5
3.1
15.1
2.7
15.5 21
7.1
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 0: Mar. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
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| PDF Descargar | [ Datasheet AO4940.PDF ] | |
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