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PDF TPCF8304 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8304 | |
| Descripción | Notebook PC Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCF8304
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.9 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
-30
-30
±20
-3.2
-12.8
1.35
1.12
0.53
0.33
0.67
-1.6
0.11
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
87 65
12 34
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-17
1 page  
RDS (ON) – Ta
150
120
90
60
30
0
−80
ID = -0.8A, -1.6A, -3.2A
VGS = -4.5V
VGS = -10V
ID = -0.8A, -1.6A, -3.2A
Common source
Pulse test
−40 0
40 80 120
Ambient temperature Ta (°C)
160
TPCF8304
www.DataSheet4U.com
IDR – VDS
10
-10
5
-3.0 -1.0
3
-5.0 VGS = 0 V
1
0.5
0.3 Common source
Ta = 25°C
Pulse test
0.1
0 0.3 0.6 0.9 1.2 1.5
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100 Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
-0.1
-1
Crss
-3 -5 -10
-30 -50 -100
Drain-source voltage VDS (V)
Vth – Ta
-2.0
-1.5
-1.0
Common source
-0.5 VDS = -10 V
ID = -1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
1.6
(1)
1.2
(2)
0.8
(3)
PD – Ta
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5s
0.4
(4)
0
0
40 80 120 160
Ambient temperature Ta (°C)
200
Dynamic input/output
characteristics
-30
-15
-25 VDS
VDD = -24V
-20
-15
-12
VDD = -6V
VGS
-10
-10
-6
-5
0
0
-12
-24
Common
source
ID = -3.2 A
Ta = 25°C
Pulse test
4 8 12
Total gate charge Qg (nC)
-5
0
16
5 2006-11-17
5 Page | ||
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| PDF Descargar | [ Datasheet TPCF8304.PDF ] | |
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