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PDF TPCF8301 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8301 | |
| Descripción | FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE | |
| Fabricantes | Toshiba Semiconductor | |
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TPCF8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8301
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
−20
−20
±8
−2.7
−10.8
1.35
1.12
0.53
0.33
1.2
−1.35
0.11
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8765
1234
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-16
1 page  
RDS (ON) – Ta
300
Common source
ID = −1.4 A
Pulse test
250
VGS = −1.8 V
200
150 ID = −2.7 A
−0.7 A
ID = −1.4 A
−0.7 A
100 −2.5 V
50
−4.5 V
ID = −0.7, −1.4, −2.7 A
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
TPCF8301
−100
Common source
Ta = 25°C
Pulse test
IDR – VDS
−4.5
−10 −2.5
−1.8
−1
VGS = 0 V
−1
0 0.4 0.8 1.2 1.6 2.0
Drain-source voltage VDS (V)
Capacitance – VDS
10000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1000
Ciss
100 Coss
Crss
10
−0.1
−1 −10
Drain-source voltage VDS (V)
−100
−2.0
Common source
VDS = −10 V
ID = −200 µA
Pulse test
−1.5
Vth – Ta
−1.0
−0.5
−0.0
−80
−40 0
40 80 120
Ambient temperature Ta (°C)
160
2
t=5s
1.6
(1)
1.2 (2)
0.8
(3)
0.4 (4)
PD – Ta
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−20 −10
−16
−12
−8
−4
0
0
VDS
−4 V
−8 V
−8
VDD = −16 V −6
VGS
−4
Common source
ID = −2.7 A
Ta = 25°C
Pulse test
−2
−2 −4 −6 −8
Total gate charge Qg (nC)
0
−10
5 2006-11-16
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCF8301.PDF ] | |
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