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PDF TPCF8303 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8303 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCF8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8303
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.45 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
Rating
-20
-20
±8
-3.0
-12
1.35
1.12
0.53
0.33
0.58
-1.5
0.11
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
87 65
12 34
Marking (Note 6)
85
F5C
14
1 2003-07-16
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TPCF8303.PDF ] | |
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