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PDF MRF6V2010NB Data sheet ( Hoja de datos )
| Número de pieza | MRF6V2010NB | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 3, 10/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 35 mA,
Pout = 10 Watts
Power Gain — 25 dB
Drain Efficiency — 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 10 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant
MRF6V2010N
MRF6V2010NB
PREPRODUCTION
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF6V2010N
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF6V2010NB
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +110
- 0.5, +10
- 65 to +150
225
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
RθJC
TBD
TBD
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
TBD (Minimum)
Machine Model (per EIA/JESD22 - A115)
TBD (Minimum)
Charge Device Model (per JESD22 - C101)
TBD (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MRF6V2010NB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF6V2010N | RF Power Field Effect Transistor | Motorola Semiconductor |
| MRF6V2010NB | RF Power Field Effect Transistor | Motorola Semiconductor |
| MRF6V2010NBR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |  Freescale Semiconductor |
| MRF6V2010NR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor |
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