|
|
PDF MRF6V2010NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V2010NBR1 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF6V2010NBR1 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA,
Pout = 10 Watts
Power Gain — 23.9 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• TO--270--2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO--272--2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6V2010N
Rev. 5, 4/2010
MRF6V2010NR1
MRF6V2010NBR1
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265--09, STYLE 1
TO--270--2
PLASTIC
MRF6V2010NR1
CASE 1337--04, STYLE 1
TO--272--2
PLASTIC
MRF6V2010NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
RθJC
3.0
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
1
1 page  
TYPICAL CHARACTERISTICS
100 100
Ciss
10
Coss
1
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
0.1
0 10 20 30 40 50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
0.35
0.3
VGS = 3 V
0.25
0.2
2.75 V
0.15
2.63 V
0.1 2.5 V
0.05
2.25 V
0
0 20 40 60 80 100 120
DRAIN VOLTAGE (VOLTS)
Figure 5. DC Drain Current versus Drain Voltage
--20 15 mA
--25 23 mA
--30 30 mA
--35
38 mA
--40
45 mA
--45
--50 IDQ = 60 mA
--55
VDD = 50 Vdc
f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements
100 kHz Tone Spacing
1 10 20
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Third Order Intermodulation Distortion
versus Output Power
10
1
0.1
1
TC = 25°C
10
100 200
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
25
24 IDQ = 45 mA
38 mA
23
30 mA
22
23 mA
21
20 15 mA
19
VDD = 50 Vdc
f1 = 220 MHz
18
0.1
1
10 20
Pout, OUTPUT POWER (WATTS) CW
Figure 6. CW Power Gain versus Output Power
47
45
P3dB = 40.87 dBm (12.2 W)
43
P1dB = 40.43 dBm (11.04 W)
Ideal
41
Actual
39
VDD = 50 Vdc, IDQ = 30 mA
f = 220 MHz
37
13 15 17 19 21 23
Pin, INPUT POWER (dBm)
Figure 8. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
5
5 Page 
Zo = 50 Ω
f = 450 MHz Zsource
f = 220 MHz Zsource
f = 130 MHz Zsource
f = 64 MHz Zsource
f = 450 MHz Zload
f = 220 MHz Zload
f = 130 MHz Zload
f = 64 MHz Zload
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW
f
MHz
Zsource
Ω
Zload
Ω
64 37.5 + j15.1 94.5 + j16.7
130 26.7 + j21.3
83.8 + j35.0
220 20.0 + j25.4
75.0 + j44.0
450 7.70 + j21.0
43.0 + j49.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 18. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
11
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet MRF6V2010NBR1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF6V2010NBR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |