|
|
Datasheet MRF6V2010NB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | MRF6V2010NB | RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 3, 10/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver applications with frequencie |
Motorola Semiconductor |
|
1 | MRF6V2010NBR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are s |
Freescale Semiconductor |
Esta página es del resultado de búsqueda del MRF6V2010NB. Si pulsa el resultado de búsqueda de MRF6V2010NB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |