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PDF MJE200 Data sheet ( Hoja de datos )
| Número de pieza | MJE200 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJE200 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MJE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.)
• Complement to MJE210
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10mA, IB=0
VCB=40V, IE=0
VCB=40V, IE=0 @ TJ=125°C
VBE=8V, IC=0
VCE=1V, IC=500mA
VCE=1V, IC=2A
VCE=2V, IC=5A
IC=500mA, IB=50mA
IC=2A, IC=200mA
IC=5A, IB=1A
IC=5A, IB=1A
VCE=1V, IC=2A
VCE=10V, IC=100mA
VCB=10V, IE=0, f=0.1MHz
Value
40
25
8
5
15
150
- 65 ~ 150
Units
V
V
V
A
W
°C
°C
Min.
25
70
45
10
65
Max.
100
100
100
Units
V
nA
µA
nA
180
0.3
0.75
1.8
2.5
1.6
80
V
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJE200.PDF ] | |
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