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PDF MJE200 Data sheet ( Hoja de datos )
| Número de pieza | MJE200 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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Hay una vista previa y un enlace de descarga de MJE200 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MJE200 NPN
MJE210 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE200, MJE210
types are complementary silicon transistors designed
for high gain amplifier applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
ΘJA
ΘJC
40
25
8.0
5.0
10
1.0
1.5
15
-65 to +150
83.4
8.34
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=40V
ICBO
VCB=40V, TJ=125°C
IEBO
VEB=8.0V
BVCEO
IC=10mA
25
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=2.0A, IB=200mA
VCE(SAT)
IC=5.0A, IB=1.0A
VBE(SAT)
IC=5.0A, IB=1.0A
VBE(ON)
VCE=1.0V, IC=2.0A
hFE VCE=1.0V, IC=500mA
70
hFE VCE=1.0V, IC=2.0A
45
hFE VCE=2.0V, IC=5.0A
10
fT
VCE=10V, IC=100mA, f=10MHz
65
Cob VCB=10V, IE=0, f=100kHz (MJE200)
Cob VCB=10V, IE=0, f=100kHz (MJE210)
MAX
100
100
100
0.3
0.75
1.8
2.5
1.6
180
80
120
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
R1 (2-May 2012)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJE200.PDF ] | |
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