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Datasheet MJE200 Equivalent ( PDF ) |
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| 5 | MJE200 | COMPLEMENTARY SILICON POWER TRANSISTORS MJE200 NPN MJE210 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS |
 Central Semiconductor |
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| 4 | MJE200 | 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE200/D
Complementary Silicon Power Plastic Transistors
. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • H |
 Motorola Semiconductors |
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| 3 | MJE200 | NPN Epitaxial Silicon Transistor MJE200
MJE200
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbo |
 Fairchild |
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| 2 | MJE200 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJE200
DESCRIPTION ·Low Collector–Emitter Saturation Voltage·DC Current Gain-Bandwidth Product ·High DC Current Gain ·Complement to MJE210
APPLICATIONS ·Designed for low voltage, low-power, high-gain audio |
 Inchange Semiconductor |
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