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PDF 2SK2203 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2203 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2203 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK2203
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
ADE-208-139
1st. Edition
D
G1
2
3
1. Gate
2. Drain
3. Source
S
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I D = 50 A
0.4
0.2 20 A
10 A
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
2SK2203
Static Drain to Source State Resistance
vs. Drain Current
0.05
Pulse Test
0.02
0.01 4 V
0.005
VGS = 10 V
0.002
0.001
0.0005
1
3 10 30 100 300 1000
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.04
0.03
0.02
0.01
0
–40
VGS = 4 V
10 V
I D = 50 A
10 A
20 A
10 A
20 A
50 A
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30 –25 °C
Tc = 25 °C
10
75 °C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30
Drain Current I D (A)
100
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK2203.PDF ] | |
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