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PDF 2SK2202 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2202 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2202 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK2202
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
Outline
TO-220FM
ADE-208-089 A
2nd. Edition
D 12 3
1. Gate
G 2. Drain
3. Source
S
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6 I D = 5 A
1.2
0.8
2A
0.4 1 A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK2202
Static Drain to Source State Resistance
vs. Drain Current
5
2 Pulse Test
1
0.5
V GS = 4 V
10 V
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
0.6
ID=5A
2A
1A
0.4 VGS = 4 V
0.2 10 V
5A
1, 2 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
V DS = 10 V
5 Pulse Test
2
Tc = 75 °C
25 °C
–25 °C
1
0.5
0.2
0.1
0.1
0.2 0.5 1 2
5
Drain Current I D (A)
10
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK2202.PDF ] | |
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