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PDF 2SK2201 Data sheet ( Hoja de datos )

Número de pieza 2SK2201
Descripción Silicon N-Channel MOS Type Field Effect Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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2SK2201
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2201
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4 V gate drive
z Low drainsource ON-resistance
: RDS (ON) = 0.28 (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
3
12
20
140
3
2
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Rth (chc)
6.25 °C / W
JEDEC
Thermal resistance, channel to
ambient
Rth (cha)
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 , IAR = 3 A
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20

1 page




2SK2201 pdf
2SK2201
RG = 25
VDD = 25 V, L = 25 mH
EAS
=
1
2
L I2
⋅ ⎜⎛
BVDSS
BVDSS VDD
⎟⎞
5 2006-11-20

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