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PDF BS250 Data sheet ( Hoja de datos )

Número de pieza BS250
Descripción DMOS Transistors (P-Channel)
Fabricantes General Semiconductor　
Logotipo General Semiconductor Logotipo



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No Preview Available ! BS250 Hoja de datos, Descripción, Manual

TO-92
.181 (4.6)
BS250
DMOS Transistors (P-Channel)
.142 (3.6)
FEATURES
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
max.∅ .022 (0.55)
.098 (2.5)
DS
G
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
On special request, this transistor is also manufactured
in the pin configuration TO-18.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Drain-Source Voltage
–VDSS
60
Drain-Gate Voltage
–VDGS
60
Gate-Source Voltage (pulsed)
VGS ± 20
Drain Current (continuous)
–ID 250
Power Dissipation at Tamb = 25 °C
Ptot 0.831)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
mA
W
°C
°C
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.12 A, Tj = 25 °C
Symbol
IF
VF
Value
0.3
0.85
Unit
A
V
4/98

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BS250 pdf
RATINGS AND CHARACTERISTIC CURVES BS250

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